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Yb:YAG crystals
Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped crystals. It can be pumped at 0.94 nm and generates 1.03 nm laser output. Compared with the commonly used Nd:YAG crystal, Yb:YAG crystal has a larger absorption bandwidth in order to reduce thermal management requirements for diode lasers, a longer upper-state lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd: YAG crystal for high power diode-pumped lasers and other potential applications, such as, its doubling wavelength is 515 nm very close to that of Ar-ion laser (514 nm),which makes it possible to replace large volume Ar-ion laser.
Advantages of Yb:YAG Crystal
◇ Very low fractional heating, less than11%
◇ Very high slope efficiency
◇ Broad absorption bands, about 8nm@940nm
◇ No excited-state absorption or up-conversion
◇ Conveniently pumped by reliable InGaAs diodes at 940nm(or 970nm)
◇ High thermal conductivity and large mechanical strength
◇ High optical quality
| Dopant concentration | Yb: 0.5─30 atm% |
| Wavefront Distortion | ≤ 0.125λ/inch |
| Orientation | <111> ±5° |
| Extinction Ratio | ≥28 dB |
| Rod Sizes | Diameter:2～20mm,Length:5～150mm Upon request of customer |
| Dimensional Tolerances | Diameter:+0.00"/-0.005"mm, Length: ± 0.02" |
| Parallelism | ≤10" |
| Perpendicularity | ≤5′ |
| Flatness | λ/10 |
| Surface Quality | 10/5(MIL-PRF-13830B) |
| Chamfer | <0.1 mm @ 45º |
| AR Coating Reflectivity | ≤ 0.2% (@1030nm) |
| Single pass loss | <3×103cm-1 |
| Chemical Formula: | Yb:Y3AL5O12 |
| Crystal Structure: | Cubic |
| Lattice Constants | 12.01 Å |
| Concentration | 0.2÷100at% |
| Dopant Tolerance | ±0.01at% |
| Melting Point | 1970℃ |
| Density | 4.56g/cm3±Δ |
| Mohs Hardness | 8.5 |
| Refractive Index | 1.82 |
| Thermal Expansion Coefficient |
7.8×10-6/k[111] 0-250 ℃,
7.7×10-6/ ℃ , <110> (0~250 ℃ )
8.2×10-6/ ℃ , <100> (0~250 ℃ |
| Thermal Conductivity | 14W/m/k@20℃, 10.5W/m/k@100℃ |
| Lasing Wavelength | 1030nm |
| Stimulated Emission Cross Section | 2.8×10-19 cm-2 |
| Pump Wavelength | 940nm |
| Optical Homogeneity | Δn/n(refractive index)< 10-5 |
| Demensions | 135×130×25mm |
| Single pass loss@25°C, W x cm-1x °K-1 | 3×103cm-1 |
| Laser Transition | 2F5/2→2F7/2 |
| Laser Wavelength | 1030nm |
| Photon Energy | 1.93×10-19J(@1030nm) |
| Emission Linewidth | 9nm |
| Emission Cross Section | 2.0×10-20cm2 |
| Fluorescence Lifetime | 1.2 ms |
| Diode Pump Band | 940nm or 970nm |
| Pump Absorption Band Width | 8 nm |
| Index of Refraction | 1.82 |
| Thermal Optical Coefficient | 9×10-6/℃ |
| Loss Coefficient |
0.003 cm-1
|