Home > NLO crystals > KTP > KTP Crystals
Crystal Structure | Orthorhombic, space group Pna21,point group mm2 |
Lattice Parameter | a=6.404?, b=10.616?, c=12.814?, Z=8 |
Melting Point | About 1172°C |
Mohs Hardness | 5 |
Density | 3.01 g/cm3 |
Thermal Conductivity | 13W/m/K |
Thermal Expansion Coefficient | αx=11x10-6/°C, αy=9x10-6/°C, αz=0.6x10-6/°C |
Transparency Range | 350~4500nm |
SHG Phase Matchable Range | 497~1800nm (Type II) |
Therm-optic Coefficients (/°C) |
dnx/dT=1.1X10-5 dny/dT=1.3X10-5 dnz/dT=1.6X10-5 |
Absorption Coefficients | <0.1%/cm at 1064nm <1%/cm at 532nm |
For Type II SHG of a Nd:YAG laser at 1064nm
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Temperature Acceptance: 24°C-cm Spectral Acceptance: 0.56nm-cm Angular Acceptance: 14.2mrad-cm (φ);55.3mrad-cm (θ) Walk-off Angle: 0.55° |
NLO Coefficients | deff(II)≈(d24-d15)sin2φsin2θ-(d15sin2φ + d24cos2φ)sinθ |
Non-vanished NLO susceptibilities | d31=6.5 pm/V d24=7.6 pm/V d32=5 pm/V d15=6.1 pm/V d33=13.7 pm/V |
Sellmeier Equations (λ in μm) |
nx2=3.0065+0.03901/(λ2-0.04251)-0.01327λ 2 ny2=3.0333+0.04154/(λ 2-0.04547)-0.01408λ2 nz2=3.3134+0.05694/(λ 2-0.05658)-0.01682λ2 |
Electro-optic coefficients: | Low frequency(pm/V) | High frequency(pm/V) |
R13 | 935 | 8.8 |
R23 | 15.7 | 13.8 |
R33 | 36.3 | 35.0 |
R51 | 7.3 | 6.9 |
R42 | 9.3 | 8.8 |
Dielectric constantq | Εeff =13 |
As an efficient OPO crystal pumped by a Nd:laser and its second harmonics, KTP plays an important role for parametric sources for tunable outputs from visible (600nm) to mid-IR (4500nm), as shown in Fig. 3 and Fig. 4.
Generally, KTP’s OPOs provide stable and continuous pulse outputs (signal and idler) in fs, with 108 Hz repetition rate and a mW average power level. A KTP’s OPO that are pumped by a 1064nm Nd:YAG laser has generated as high as above 66% efficiency for degenerately converting to 2120nm.
The novel developed application is the non-critical phase-matched(NCPM) KTP OPO/OPA pumped by the X-cut KTP crystal. As shown in Fig.5, for pumping wavelength range from 0.7μm to 1 μm, the output can cover from 1.04μm to 1.45μm(signal) and from 2.15μm to 3.2μm(idler). More than 45% conversion efficiency was obtained with narrow output bandwidth and good beam quality.
In addition to unique NLO features, KTP also has promising E-O and dielectric properties that are comparable to LiNbO3These advantaged properties make KTP extremely useful to various E-O devices. Table 1 is a comparison of KTP with other E-O modulator materials commonly used:
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Phase
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Amplitude
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Material
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ε
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N
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R(pm/V)
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k(10-6/°C)
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N7r2/ε(pm/V)2
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r(pm/V)
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k(10-6/°C)
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n7r2/ε(pm/V)2
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KTP
LiNbO3
KD*P
LiIO3
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15.42
27.9
48.0
5.9
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1.80
2.20
1.47
1.74
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35.0
8.8
24.0
6.4
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31
82
9
24
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6130
7410
178
335
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27.0
20.1
24.0
1.2
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11.7
42
8
15
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3650
3500
178
124
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Materials
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r (pm/V)
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n
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eeff (e11e33)1/2
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n3r/eeff (pm/V)
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KTP
LiNbO3
KNbO3
BNN
BN
GaAs
BaTiO3
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35
29
25
56
56-1340
1.2
28
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1.86
2.20
2.17
2.22
2.22
3.6
2.36
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13
37
30
86
119-3400
14
373
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17.3
8.3
9.2
7.1
5.1-0.14
4.0
1.0
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Dimension tolerance
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(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)
(W±0.1mm)x(H±0.1mm)x(L+0.1/-0.1mm) (L<2.5mm) |
Clear aperture
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central 90% of the diameter
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Flatness
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less than λ/8 @ 633nm
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Transmitting wavefront distortion
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less than λ/8 @ 633nm
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Chamfer
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≤0.2mm@45°
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Chip
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≤0.1mm
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Scratch/Dig code
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better than 10/ 5 to MIL-PRF-13830B
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Parallelism
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better than 20 arc seconds
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Perpendicularity
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≤5 arc minutes
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Angle tolerance
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Δθ≤0.25°, Δφ≤0.25°
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Damage threshold[GW/cm ]:
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>0.5 for 1064nm, TEM00, 10ns, 10HZ (AR-coated)
>0.3 for 532nm, TEM00, 10ns, 10HZ (AR-coated) |