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KTP Crystals

KTP Crystals

KTP Crystals

Potassium Titanyl Phosphate (KTiOPO4,KTP) 


Potassium Titanyl Phosphate (KTiOPO3 or KTP) is widely used in both commercial and military lasers including laboratory and medical systems, range-finders, lidar, optical communication and industrial systems.
KTP is featured by 
•Large nonlinear optical coefficient
•Wide angular bandwidth and small walk-off angle
•Broad temperature and spectral bandwidth
•High electro-optic coefficient and low dielectric constant
•Large figure of merit
   Nonhydroscopic, chemically and mechanically stable
 

Table 1. Chemical and Structural properties

 
Crystal Structure Orthorhombic, space group Pna21,point group mm2
Lattice Parameter a=6.404?, b=10.616?, c=12.814?, Z=8
Melting Point    About 1172°C
Mohs Hardness    5
Density          3.01 g/cm3
Thermal Conductivity   13W/m/K
Thermal Expansion Coefficient αx=11x10-6/°C, αy=9x10-6/°C, αz=0.6x10-6/°C
 

Table 2. Optical and Nonlinear Optical Properties

 
Transparency Range 350~4500nm
SHG Phase Matchable Range 497~1800nm  (Type II)
Therm-optic Coefficients
(/°C)
dnx/dT=1.1X10-5
dny/dT=1.3X10-5
dnz/dT=1.6X10-5
Absorption  Coefficients <0.1%/cm at 1064nm    <1%/cm at 532nm
For Type II SHG of a Nd:YAG laser at 1064nm
 
 
Temperature Acceptance: 24°C-cm 
Spectral Acceptance: 0.56nm-cm
Angular Acceptance: 14.2mrad-cm (φ);55.3mrad-cm (θ)
Walk-off Angle: 0.55°
NLO Coefficients deff(II)≈(d24-d15)sin2φsin2θ-(d15sin2φ + d24cos2φ)sinθ
Non-vanished NLO susceptibilities d31=6.5 pm/V    d24=7.6 pm/V
d32=5 pm/V        d15=6.1 pm/V
d33=13.7 pm/V
Sellmeier  Equations
(λ in μm)     
nx2=3.0065+0.03901/(λ2-0.04251)-0.01327λ 2
ny2=3.0333+0.04154/(λ 2-0.04547)-0.01408λ2 
nz2=3.3134+0.05694/(λ 2-0.05658)-0.01682λ2
 
Electro-optic coefficients: Low frequency(pm/V) High frequency(pm/V)
R13 935 8.8
R23 15.7 13.8
R33 36.3 35.0
R51 7.3 6.9
R42 9.3 8.8
Dielectric constantq Εeff =13
 

Applications for SHG and SFG of Nd: lasers

 
KTP is the most commonly used material for frequency doubling of Nd:YAG and other Nd-doped lasers, particularly when the power density is at a low or medium level. To date, extra- and intra-cavity frequency doubled Nd:lasers using KTP have become a preferred pumping source for visible dye lasers and tunable Ti:Sapphire lasers as well as their amplifiers. They are also useful green sources for many research and industry applications.
* More than 80% conversion efficiency and 700mJ green laser were obtained with a 900mJ 
   injection-seeded Q-switch Nd:YAG lasers by using extra-cavity KTP.
* 8W green laser was generated from a 15W LD pumped Nd:YVO4 with intra-cavity KTP. 
* 200mW green outputs are generated from 1 W LD pumped Nd:YVO4 lasers by        using CASTECH ’s 2x2x5mm KTP and 3x3x1mm Nd:YVO4
* 2-5mw green outputs are generated from 180mw LD pumped Nd:YVO4 and KTP glued    crystals.For more details, please refer to Glued Crystals.
KTP is also being used for intracavity mixing of 0.81μm diode and 1.064μm Nd:YAG laser to generate blue light and intracavity SHG of Nd:YAG or Nd:YAP lasers at 1.3μm to produce red light.

Applications for OPG, OPA and OPO


As an efficient OPO crystal pumped by a Nd:laser and its second harmonics, KTP plays an important role for parametric sources for tunable outputs from visible (600nm) to mid-IR (4500nm), as shown in Fig. 3 and Fig. 4.
Generally, KTP’s OPOs provide stable and continuous pulse outputs (signal and idler) in fs, with 108 Hz repetition rate and a mW average power level. A KTP’s OPO that are pumped by a 1064nm Nd:YAG laser has generated as high as above 66% efficiency for degenerately converting to 2120nm.

The novel developed application is the non-critical phase-matched(NCPM) KTP OPO/OPA pumped by the X-cut KTP crystal. As shown in Fig.5, for pumping wavelength range from 0.7μm to 1 μm, the output can cover from 1.04μm to 1.45μm(signal) and from 2.15μm to 3.2μm(idler). More than 45% conversion efficiency was obtained with narrow output bandwidth and good beam quality.

 

 

 Applications for E-O Devices


In addition to unique NLO features, KTP also has promising E-O and dielectric properties that are comparable to LiNbO3These advantaged properties make KTP extremely useful to various E-O devices. Table 1 is a comparison of KTP with other E-O modulator materials commonly used:

Table 3 Electro-Optic Modulator Materials

 

 
 
 
   
Phase
 
 
Amplitude
 
Material
ε
N
R(pm/V)
k(10-6/°C)
N7r2/ε(pm/V)2
r(pm/V)
k(10-6/°C)
n7r2/ε(pm/V)2
KTP
LiNbO3
KD*P
LiIO3
15.42  
27.9
48.0
5.9
1.80
2.20
1.47
1.74
35.0
 8.8
24.0
6.4
31
82
9
24
6130
7410
178
335
27.0
20.1
24.0
1.2
   11.7
   42
    8
   15
3650
3500
178
124
From Table 3, clearly, KTP is expected to replace LiNbO3 crystal in the considerable volume application of E-O modulators, when other merits of KTP are combined into account, such as high damage threshold, wide optical bandwidth (>15GHZ), thermal and mechanical stability, and low loss, etc.
Applications for Optical Waveguides
Based on the ion-exchange process on KTP substrate, low loss optical waveguides developed for KTP have created novel applications in integrated optics. Table 4 gives a comparison of KTP with other optical waveguide materials. Recently, a type II SHG conversion efficiency of 20%/W/cm2 was achieved by the balanced phase matching, in which the phase mismatch from one section was balanced against a phase mismatch in the opposite sign from the second. Furthermore, segmented KTP waveguides have been applied to the type I quasi-phase-matchable SHG of a tunable Ti:Sapphire laser in the range of 760-960mm, and directly doubled diode lasers for the 400-430nm outputs.
 

Table 24. Electro-Optic Waveguide Materials

 
Materials
r (pm/V)
n
eeff (e11e33)1/2
n3r/eeff (pm/V)
KTP
LiNbO3
KNbO3
BNN
BN
GaAs
BaTiO3
35
29
25
56
56-1340
1.2
28
1.86
2.20
2.17
2.22
2.22
3.6
2.36
13
37
30
86
119-3400
14
373
17.3
8.3
9.2
7.1
5.1-0.14
4.0
1.0
 

KTP Specifications:

 
Dimension tolerance
(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)
 (W±0.1mm)x(H±0.1mm)x(L+0.1/-0.1mm) (L<2.5mm)
Clear aperture
central 90% of the diameter
Flatness
less than λ/8 @ 633nm
Transmitting wavefront distortion
less than λ/8 @ 633nm
Chamfer
≤0.2mm@45°
Chip
≤0.1mm
Scratch/Dig code
better than 10/ 5 to MIL-PRF-13830B
Parallelism
better than 20 arc seconds
Perpendicularity
≤5 arc minutes
Angle tolerance
Δθ≤0.25°, Δφ≤0.25°
Damage threshold[GW/cm ]:
>0.5 for 1064nm, TEM00, 10ns, 10HZ (AR-coated)
>0.3 for 532nm, TEM00, 10ns, 10HZ (AR-coated)

 

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